| PART |
Description |
Maker |
| IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
|
Infineon Technologies AG
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| SLD1332V |
The Industrys Highest Power 670 nm Band Laser Diode Achieves 500 mW Optical Power Output
|
List of Unclassifed Manufacturers
ETC
|
| RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF640 |
18A 200V N CHANNEL POWER MOSFET
|
First Components Intern...
|
| R6018ANX12 |
Nch 600V 18A Power MOSFET
|
Rohm
|
